BLF881,112
RF Power Transistor, 0.005 to 0.86GHz, 140W, 21dB, 50V, LDMOS, SOT-467C

产品联系
Company: 深圳市捷比信实业有限公司
Phone: 0755-29796190
Address: 深圳市宝安区翻身路富源大厦1栋7楼
Email: tao@jepsun.com
Contact Person: 陆经理


Company: 深圳市捷比信实业有限公司
Phone: 0755-29796190
Address: 深圳市宝安区翻身路富源大厦1栋7楼
Email: tao@jepsun.com
Contact Person: 陆经理
| 参数 | 值 |
|---|---|
| 产品 | 晶体管 |
| 型号编码 | BLF881,112 |
| 说明 | RF Power Transistor, 0.005 to 0.86GHz, 140W, 21dB, 50V, LDMOS, SOT-467C |
| 品牌 | Ampleon USA |
| 封装 | - |
| 晶体管 | BLF9G38LS-90PJ |
| 晶体管 | BLP7G22-10Z |
| JFET晶体管 | CLF1G0035-50,112 |
| MOS管 | BLM7G1822S-40ABY |
| 晶体管 | BLF7G20LS-200,118 |
| 晶体管 | BLM7G1822S-20PBGY |
| 晶体管 | BLF888A,112 |
| 晶体管 | BLF183XRU |
| 2256000R | |
| 2256000-R | |
| ASR-7000PLUS/UK-KIT | |
| ASR-4000/UK-KIT | |
| ASR-4000PLUS/UK-KIT | |
| 存储芯片 | AP-MSD04GIHI-T |
| 存储芯片 | AP-CF004GRANS-ETNRC |
| Flash芯片 | APHA008G2BACG-DTM |
| 存储芯片 | AP-CF004GL9FS-NR |
| 存储芯片 | AP-MSD256ISI-1T |
| 存储芯片 | AP-CF008GE3NR-ETNRQ |
| RAM芯片 | AP-UM512MT13ES-2MSNRT |
| RAM芯片 | AP-UM512MR13CS-2MSNRT |
| RAM芯片 | AP-UM002GT13ES-2MSNRT |
| 存储芯片 | AP-ISD16GCD4A-8T |
| 存储芯片 | AP-CF002GE3NR-NRQ |
| 存储芯片 | AP-ISD01GCS2A-8T |
| 存储芯片 | AP-ISD08GID4B-8T |
| 存储芯片 | AP-CF128GLANS-NRG |
| 存储芯片 | AP-CF002GR9NS-NRA |
| 8V5-29 REV A | |
| D38999/21YC98PN | |
| MS27476Y8N35P | |
| D38999/21YB98PN | |
| M83723/88Y1006N | |
| D38999/21YC8PN | |
| D38999/21YB35PN | |
| D38999/21YB98PA | |
| D38999/21YA35PN | |
| M83723/88Y1005N | |
| D38999/21YA98PN | |
| D38999/21YB35PC |